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FDP80N06 N-Channel MOSFET
September 2007
UniFETTM
FDP80N06
N-Channel MOSFET
60V, 80A, 10m Features
* RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A * Low gate charge(Typ. 57nC) * Low Crss(Typ. 145pF) * Fast switching * Improved dv/dt capability * RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies,active power factor correction, electronic lamp ballast based on half bridge topology.
D
G G DS
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Ratings 60 20 80 65 320 480 80 17.6 4.5 176 1.17 -55 to +175 300 Units V V A A mJ A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.85 62.5 Units
o
C/W
(c)2007 Fairchild Semiconductor Corporation FDP80N06 Rev. A
1
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FDP80N06 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP80N06 Device FDP80N06 Package TO-220 Reel Size Tape Width Quantity 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C VDS = 60V, VGS = 0V VDS = 48V, TC = 150oC VGS = 20V, VDS = 0V
o
60 -
0.075 -
1 10 100
V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 40A VDS = 25V, ID = 40A
(Note 4)
2.0 -
-8.5 67
4.0 10 -
V m S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V f = 1MHz 2450 910 145 3190 1190 190 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg(tot) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 48V, ID = 80A VGS = 10V
(Note 4, 5)
VDD = 30V, ID = 80A RG = 25
(Note 4, 5)
32 259 136 113 57 15 24
75 528 282 236 74 -
ns ns ns ns nC nC nC
-
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 80A VGS = 0V, ISD = 80A dIF/dt = 100A/s
(Note 4)
-
64 127
80 320 1.4 -
A A V ns nC
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.15mH, IAS = 80A, VDD = 50V, RG = 25, Starting TJ = 25C 3: ISD 80A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics
FDP80N06 Rev. A
2
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FDP80N06 N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V
Figure 2. Transfer Characteristics
500
*Notes: 1. VDS = 20V 2. 250s Pulse Test
100
ID,Drain Current[A]
100
ID,Drain Current[A]
10
175 C
o
-55 C 25 C
o
o
10
1
0.4 0.02
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
1 0.1 1 VDS,Drain-Source Voltage[V] 10 0 2 4 6 8 VGS,Gate-Source Voltage[V] 10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.03
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
500
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
100
0.02
175 C
o
25 C
o
VGS = 10V
10
0.01
VGS = 20V
*Notes: 1. VGS = 0V
0.00 0
*Note: TJ = 25 C
o
80 160 240 ID, Drain Current [A]
320
1 0.0
2. 250s Pulse Test
0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
6000
Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 15V VDS = 30V VDS = 48V
8
4500 Capacitances [pF]
Coss *Note: 1. VGS = 0V 2. f = 1MHz
6
3000
Crss
4
1500
2
*Note: ID = 80A
0 0.1
1 10 VDS, Drain-Source Voltage [V]
30
0 0
15 30 45 Qg, Total Gate Charge [nC]
60
FDP80N06 Rev. A
3
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FDP80N06 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
2.5
RDS(on), [Normalized] Drain-Source On-Resistance
1.1
2.0
1.0
1.5
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
1.0
*Notes: 1. VGS = 10V 2. ID = 40A
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.5 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
1000
30s 100s 1ms
Figure 10. Maximum Drain Current vs. Case Temperature
90 75
ID, Drain Current [A]
100
ID, Drain Current [A]
80
10
Operation in This Area is Limited by R DS(on)
10ms DC
60 45 30 15 0 25
1
*Notes:
0.1
1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o
o
0.01 1
10 VDS, Drain-Source Voltage [V]
50 75 100 125 150 o TC, Case Temperature [ C]
175
Figure 11. Transient Thermal Response Curve
2 1 Thermal Response [ZJC]
0.5 0.2
0.1
0.1 0.05 0.02
PDM t1 t2
0.01
0.01
*Notes:
Single pulse
1. ZJC(t) = 0.85 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
1E-3 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
10
0
10
1
FDP80N06 Rev. A
4
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FDP80N06 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP80N06 Rev. A
5
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FDP80N06 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP80N06 Rev. A
6
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FDP80N06 N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP80N06 Rev. A
7
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FDP80N06 N-Channel MOSFET
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
8 FDP80N06 Rev. A
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